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PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
Rev. 01 -- 11 March 2009
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Product data sheet
1. Product profile
1.1 General description
Low capacitance unidirectional double ElectroStatic Discharge (ESD) protection diodes in a very small Surface-Mounted Device (SMD) plastic package designed to protect up to two signal lines from the damage caused by ESD and other transients.
Table 1. Product overview Package NXP PESD5V0L2UU PESD6V0L2UU SOT323 JEITA SC-70 very small Package configuration
Type number
1.2 Features
I Unidirectional ESD protection of up to two lines I Low diode capacitance: Cd = 34 pF I Max. peak pulse power: PPP = 70 W I Low clamping voltage: VCL = 13 V I Ultra low leakage current I ESD protection up to 30 kV I IEC 61000-4-2; level 4 (ESD) I IEC 61000-4-5 (surge); IPP = 6.5 A I AEC-Q101 qualified
1.3 Applications
I Audio and video equipment I Computers and peripherals I Cellular handsets and accessories I Communication systems I Portable electronics I Subscriber Identity Module (SIM) card protection
1.4 Quick reference data
Table 2. Quick reference data Tamb = 25 C unless otherwise specified. Symbol VRWM Parameter reverse standoff voltage PESD5V0L2UU PESD6V0L2UU 5.0 6.0 V V Conditions Min Typ Max Unit
NXP Semiconductors
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
Table 2. Quick reference data ...continued Tamb = 25 C unless otherwise specified.
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Symbol Cd
Parameter diode capacitance PESD5V0L2UU PESD6V0L2UU
Conditions f = 1 MHz; VR = 0 V
[1] [2] [1] [2]
Min -
Typ 19 38 17 34
Max 23 46 20 40
Unit pF pF pF pF
[1] [2]
Bidirectional configuration: measured from pin 1 to 2 or pin 2 to 1. Unidirectional configuration: measured from pin 1 to 3 or pin 2 to 3.
2. Pinning information
Table 3. Pin 1 2 3 Pinning Description cathode (diode 1) cathode (diode 2) common anode
1 2 1 2
006aaa154
Simplified outline
3
Graphic symbol
3
3. Ordering information
Table 4. Ordering information Package Name PESD5V0L2UU PESD6V0L2UU SC-70 Description plastic surface-mounted package; 3 leads Version SOT323 Type number
4. Marking
Table 5. Marking codes Marking code[1] H1* H2* Type number PESD5V0L2UU PESD6V0L2UU
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
PESD5V0L2UU_PESD6V0L2UU_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 11 March 2009
2 of 13
NXP Semiconductors
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
5. Limiting values
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Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per diode PPP peak pulse power PESD5V0L2UU PESD6V0L2UU IPP peak pulse current PESD5V0L2UU PESD6V0L2UU Tj Tamb Tstg
[1] [2]
Parameter
Conditions tp = 8/20 s
[1][2]
Min
Max
Unit
tp = 8/20 s
[1][2]
70 60 6.5 5.5 150 +150 +150
W W A A C C C
-55 -65
junction temperature ambient temperature storage temperature
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. Measured from pin 1 or 2 to pin 3.
Table 7. ESD maximum ratings Tamb = 25 C unless otherwise specified. Symbol VESD Parameter electrostatic discharge voltage Conditions IEC 61000-4-2 (contact discharge) MIL-STD-883 (human body model)
[1] [2] Device stressed with ten non-repetitive ESD pulses. Measured from pin 1 or 2 to pin 3.
[1]
Min -
Max 30 16
Unit kV kV
[2]
Table 8. Standard
ESD standards compliance Conditions > 15 kV (air); > 8 kV (contact) > 4 kV
IEC 61000-4-2; level 4 (ESD) MIL-STD-883; class 3 (human body model)
PESD5V0L2UU_PESD6V0L2UU_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 11 March 2009
3 of 13
NXP Semiconductors
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
001aaa631
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120 IPP (%) 80 100 % IPP; 8 s
001aaa630
IPP 100 % 90 %
e-t 50 % IPP; 20 s
40
10 % tr = 0.7 ns to 1 ns 0 10 20 30 t (s) 40 30 ns 60 ns t
0
Fig 1.
8/20 s pulse waveform according to IEC 61000-4-5
Fig 2.
ESD pulse waveform according to IEC 61000-4-2
PESD5V0L2UU_PESD6V0L2UU_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 11 March 2009
4 of 13
NXP Semiconductors
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
6. Characteristics
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Table 9. Characteristics Tamb = 25 C unless otherwise specified. Symbol VRWM Parameter reverse standoff voltage PESD5V0L2UU PESD6V0L2UU IRM reverse leakage current PESD5V0L2UU PESD6V0L2UU PESD5V0L2UU PESD6V0L2UU VBR breakdown voltage PESD5V0L2UU PESD6V0L2UU Cd diode capacitance PESD5V0L2UU PESD6V0L2UU VCL clamping voltage PESD5V0L2UU PESD6V0L2UU rdif differential resistance PESD5V0L2UU PESD6V0L2UU
[1] [2] [3] [4] Bidirectional configuration: measured from pin 1 to 2 or pin 2 to 1. Unidirectional configuration: measured from pin 1 to 3 or pin 2 to 3. Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. Measured from pin 1 or 2 to pin 3.
Conditions
Min -
Typ 20 1.5 430 310 6.2 6.8 19 38 17 34 -
Max 5.0 6.0 90 18 6.6 7.2 23 46 20 40 13 13.5 25 30
Unit V V nA nA nA nA V V pF pF pF pF V V
VRWM = 4.0 V VRWM = 4.3 V VRWM = 5.0 V VRWM = 6.0 V IR = 5 mA
5.8 6.4
f = 1 MHz; VR = 0 V
[1] [2] [1] [2]
-
IPP = 5.5 A
[3][4]
IR = 5 mA -
PESD5V0L2UU_PESD6V0L2UU_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 11 March 2009
5 of 13
NXP Semiconductors
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
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Cd (pF) 30
(1)
40
006aab435
40 Cd (pF) 30
006aab436
(1)
20
(2)
20
(2)
10
10
0 0 2 4 VR (V) 6
0 0 2 4 VR (V) 6
f = 1 MHz; Tamb = 25 C (1) unidirectional (2) bidirectional
f = 1 MHz; Tamb = 25 C (1) unidirectional (2) bidirectional
Fig 3.
PESD5V0L2UU: Diode capacitance as a function of reverse voltage; typical values
I
Fig 4.
PESD6V0L2UU: Diode capacitance as a function of reverse voltage; typical values
IPP
-VCL -VBR -VRWM -IRM -IR - P-N
V -VCL -VBR -VRWM
IR IRM -IRM -IR VRWM VBR VCL
+ - +
-IPP
006aaa407
-IPP
006aaa676
Fig 5.
V-I characteristics for a unidirectional ESD protection diode
Fig 6.
V-I characteristics for a bidirectional ESD protection diode
PESD5V0L2UU_PESD6V0L2UU_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 11 March 2009
6 of 13
NXP Semiconductors
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
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ESD TESTER
RZ 450 RG 223/U 50 coax
4 GHz DIGITAL OSCILLOSCOPE 10x ATTENUATOR
50
CZ
IEC 61000-4-2 network CZ = 150 pF; RZ = 330
DUT (DEVICE UNDER TEST)
vertical scale = 10 A/div horizontal scale = 15 ns/div
vertical scale = 20 V/div horizontal scale = 50 ns/div
GND
GND
unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network)
clamped +8 kV ESD pulse waveform (IEC 61000-4-2 network)
vertical scale = 10 A/div horizontal scale = 15 ns/div GND
vertical scale = 20 V/div horizontal scale = 50 ns/div
GND
unclamped -8 kV ESD pulse waveform (IEC 61000-4-2 network)
clamped -8 kV ESD pulse waveform (IEC 61000-4-2 network)
006aab437
Fig 7.
PESD5V0L2UU: ESD clamping test setup and waveforms
PESD5V0L2UU_PESD6V0L2UU_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 11 March 2009
7 of 13
NXP Semiconductors
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
7. Application information
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PESD5V0L2UU and PESD6V0L2UU are designed for the protection of up to two unidirectional data or signal lines, or for the protection of one bidirectional data or signal line, from the damage caused by ESD. For unidirectional protection, the devices may be used on lines where the signal polarities are positive with respect to ground, and for bidirectional protection, the devices may be used on lines where the signal polarities are both, positive and negative with respect to ground. For an 8/20 s waveform, the PESD5V0L2UU provides a surge capability of up to 70 W per line, and the PESD6V0L2UU provides a surge capability of up to 60 W per line.
line 1 to be protected
line 1 to be protected line 2 to be protected
DUT GND
DUT GND
bidirectional protection of one line
unidirectional protection of two lines
006aab252
Fig 8.
Application diagram
Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD and Electrical Fast Transient (EFT). The following guidelines are recommended: 1. Place the devices as close to the input terminal or connector as possible. 2. The path length between the device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias.
PESD5V0L2UU_PESD6V0L2UU_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 11 March 2009
8 of 13
NXP Semiconductors
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
8. Test information
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8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.
9. Package outline
2.2 1.8 3 0.45 0.15
1.1 0.8
2.2 1.35 2.0 1.15
1
2 0.4 0.3 1.3 0.25 0.10 04-11-04
Dimensions in mm
Fig 9.
Package outline SOT323 (SC-70)
10. Packing information
Table 10. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PESD5V0L2UU PESD6V0L2UU
[1] For further information and the availability of packing methods, see Section 14.
Package SOT323
Description 4 mm pitch, 8 mm tape and reel
Packing quantity 3000 -115 10000 -135
PESD5V0L2UU_PESD6V0L2UU_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 11 March 2009
9 of 13
NXP Semiconductors
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
11. Soldering
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2.65 1.85 1.325 solder lands
2
solder resist solder paste occupied area Dimensions in mm
2.35
0.6 (3x)
3
1.3 0.5 (3x)
1
0.55 (3x)
sot323_fr
Fig 10. Reflow soldering footprint SOT323 (SC-70)
4.6 2.575 1.425 (3x) solder lands solder resist occupied area 3.65 2.1 1.8 Dimensions in mm preferred transport direction during soldering
09 (2x)
sot323_fw
Fig 11. Wave soldering footprint SOT323 (SC-70)
PESD5V0L2UU_PESD6V0L2UU_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 11 March 2009
10 of 13
NXP Semiconductors
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
12. Revision history
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Table 11.
Revision history Release date Data sheet status Product data sheet Change notice Supersedes -
Document ID
PESD5V0L2UU_PESD6V0L2UU_1 20090311
PESD5V0L2UU_PESD6V0L2UU_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 11 March 2009
11 of 13
NXP Semiconductors
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
13. Legal information
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13.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. ESD protection devices -- These products are only intended for protection against ElectroStatic Discharge (ESD) pulses and are not intended for any other usage including, without limitation, voltage regulation applications. NXP Semiconductors accepts no liability for use in such applications and therefore such use is at the customer's own risk. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
13.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PESD5V0L2UU_PESD6V0L2UU_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 11 March 2009
12 of 13
NXP Semiconductors
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
15. Contents
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1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Application information. . . . . . . . . . . . . . . . . . . 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Quality information . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 11 March 2009 Document identifier: PESD5V0L2UU_PESD6V0L2UU_1

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